早(zao)期(qi)UPS電(dian)源(yuan)所(suo)使(shi)用(yong)的(di)功(gong)率(shuai)開(kai)關(guan)器(qi)件(jian)為(wei)普(pu)通(tong)晶(jing)閘(zha)管(guan)及(ji)其(qi)派(pai)生(sheng)器(qi)件(jian),這(zhe)類(lei)器(qi)件(jian)的(di)優(you)點(dian)是(shi)耐(nai)高(gao)壓(ya)、通(tong)流(liu)能(neng)力(li)強(jiang),但(dan)它(ta)們(men)也(ye)存(cun)在(zai)著(zhuo)工(gong)作(zuo)效(xiao)率(shuai)低(di)和(hu)不(bu)能(neng)自(zi)關(guan)斷(duan)的(di)缺(que)點(dian),因(yin)而(er)已(yi)逐(zhu)漸(jian)被(bei)近(jin)年(nian)來(lai)新(xin)出(chu)現(xian)的(di)全(quan)控(kong)型(xing)器(qi)件(jian)所(suo)取(qu)代(dai)。在(zai)UPS中(zhong),較(jiao)為(wei)常(chang)用(yong)的(di)三(san)種(zhong)全(quan)控(kong)型(xing)功(gong)率(shuai)開(kai)關(guan)器(qi)件(jian)是(shi)電(dian)力(li)晶(jing)體(ti)管(guan)( GTR)、功(gong)率(shuai)場(chang)效(xiao)應(ying)晶(jing)體(ti)管(guan)( MOSFET )和(hu)絕(jue)緣(yuan)柵(zha)雙(shuang)極(ji)性(xing)晶(jing)體(ti)管(guan)( IGBT )。